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2MBI600VXA-120E-51

IGBT module

Product Information

Product Describe

INSULATED GATE BIPOLAR TRANSISTOR

IGBT (Insulated Gate Bipolar Transistor) module

Fuji Electric's V-Series (6th Generation)

It is a "2-in-1" (dual) package designed for high-efficiency

power switching in industrial applications

Technical specifications for 2MBI600VXA-120E-51

  • Manufacturer:
    Fuji Electric
  • Product Category:
    General Automation
  • Estimated shipping dimensions:
    12 x 10.5 x 13 cm
  • Weight:
    1.11 kg
  • Tariff Code:
    8537101190
  • Country of origin:
    Japan
  • Place of shipment:
    Xiamen, Fujian, China
  • Current consumption:
    800A I(C)
  • Product Type:
    IGBT module
  • Voltage Supply:
    1200V V(BR)CES
  • Current Rating:
    600A
  • Ambient Temperature Range:
    150°C ~ 175°C
  • Category Series:
    V-Series
  • Stock:
    10

More Information

Overview Manuals Working principle Primary Applications

Features:

  • INSULATED GATE BIPOLAR TRANSISTOR
  • IGBT (Insulated Gate Bipolar Transistor) module
  • It is a "2-in-1" (dual) package designed for high-efficiency power switching in industrial applications
It is widely used in power conversion equipment such as general-purpose frequency converters, servo drives, uninterruptible power supplies (UPS), and photovoltaic inverters, responsible for performing precise energy conversion and regulation.

This module employs advanced trench gate and field resistance technology, significantly reducing conduction and switching losses, thereby improving the overall operating efficiency of the power electronic system. Its compact V-I package design not only provides excellent heat dissipation but also integrates a fast recovery diode (FWD) to effectively suppress reverse induced electromotive force.

The 2MBI600VXA-120E-51 Fuji Electric IGBT module may still be available for purchase and support from Moore Automated Company beyond End-Of-Life (EOL) by the manufacturer (OEM).
Fuji Electric 2MBI600VXA-120E-51 IGBT module INFO(manual), Link Important Notice: Other accessories, manuals, cables, calibration data, software, etc. are not included with this equipment unless listed in the above stock item description. All prices are shown in USD.
The 2MBI600VXA-120E-51 controls the conduction and cutoff of the internal IGBT by a voltage signal input to the gate. When a positive trigger voltage is applied to the gate, an internal conduction channel is formed, allowing a large current to flow from the collector to the emitter. When the voltage is removed or a reverse bias is applied, the channel disappears, and the current is blocked. This high-frequency switching action, combined with pulse width modulation (PWM) technology, can convert DC power into AC power with adjustable frequency and voltage, or achieve boost and buck conversion. Simultaneously, the built-in freewheeling diode provides a current path for inductive loads during switching, protecting the chip from damage.
This module is typically used in heavy industrial power electronics equipment, including:
  1. Motor drives: Inverters for AC and DC servo drive amplifiers;
  2. Renewable energy: Wind and solar power generation systems;
  3. Power supplies: Uninterruptible power supply (UPS) systems;
  4. Industrial machinery: Welding machines and other high-power equipment.
By purchasing this item, you agree to the Terms & Conditions
Moore Automated is NOT an authorized distributor of Fuji Electric
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FAQ

  • How does the 2MBI600VXA-120E-51 achieve superior current handling capabilities in demanding applications?
    The 2MBI600VXA-120E-51 utilizes high-current IGBT chips and features optimized bonding wire and substrate design to support higher current densities and better heat dissipation.
  • Why is the 2MBI600VXA-120E-51 particularly suitable for medium- to high-power motor drive systems?
    The 2MBI600VXA-120E-51 offers the robust switching performance, high-voltage blocking capability, and efficient thermal management required for industrial motor drive applications.
  • What thermal management characteristics determine the reliability of the 2MBI600VXA-120E-51?
    The 2MBI600VXA-120E-51 utilizes a low thermal resistance package and a high thermal conductivity substrate, contributing to efficient heat dissipation under sustained high-power operation.
  • Why is the integrated freewheeling diode performance of the 2MBI600VXA-120E-51 crucial for inverter reliability?
    The 2MBI600VXA-120E-51 integrates a fast recovery diode, reducing reverse recovery losses and improving the overall switching performance of the inverter.
  • What are the advantages of the 2MBI600VXA-120E-51 compared to discrete IGBTs?
    Compared to discrete devices, the 2MBI600VXA-120E-51 offers higher reliability, simplified assembly, lower parasitic inductance, and superior heat dissipation.

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